Datenblatt-Suchmaschine für elektronische Bauteile |
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6N80G-TF1-T Datenblatt(PDF) 2 Page - Unisonic Technologies |
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6N80G-TF1-T Datenblatt(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-500.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous ID 6 * A Drain Current Pulsed (Note 1) IDM 22 * A Single Pulsed (Note 2) EAS 680 mJ Avalanche Energy Repetitive (Note 1) EAR 15.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 138 W Power Dissipation TO-220F/TO-220F1 PD 51 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. * Drain current limited by maximum junction temperature. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 °C/W Junction to Ambient TO-220F/TO-220F1 θJA 62.5 °C/W TO-220 0.9 °C/W Junction to Case TO-220F/TO-220F1 θJC 2.45 °C/W |
Ähnliche Teilenummer - 6N80G-TF1-T |
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Ähnliche Beschreibung - 6N80G-TF1-T |
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