Datenblatt-Suchmaschine für elektronische Bauteile |
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KA79M15 Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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KA79M15 Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 12 page KA79MXX 4 Electrical Characteristics (KA79M08/KA79M08R) (Continued) (Refer to test circuit, 0 °C ≤ TJ ≤ +125°C, lO =350mA, VI = -14V,unless otherwise specified) Note: 1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. Parameter Symbol Conditions Min. Typ. Max. Unit Output Voltage VO TJ = +25°C -7.7-8.0-8.3 V IO = 5mA to 350mA VI = -10.5V to -25V -7.6 -8.0 -8.4 Line Regulation (Note1) ΔVO TJ = +25°C VI = -10.5V to -25V - 7.0 80 mV VI = -11V to -21V - 2.0 50 Load Regulation (Note1) ΔVO TJ = +25°CIO = 5.0mA to 500mA - 30 160 mV Quiescent Current IQ TJ = +25°C- 3 6 mA Quiescent Current Change ΔIQ IO = 5mA to 350mA - - 0.4 mA VI = -8V to -25V - - 0.4 Output Voltage Drift ΔVO/ΔTIO = 5mA - -0.6 - mV/ °C Output Noise Voltage VN f = 10Hz to 100kHz, TA = +25°C- 60 - μV Ripple Rejection RR f = 120Hz,VI = -9V to -19V 54 59 - dB Dropout Voltage VD IO = 500mA, TJ = +25°C- 1.1 - V Short Circuit Current ISC VI = -35V, TJ = +25°C- 140 - mA Peak Current IPK TJ = +25°C- 650 - mA |
Ähnliche Teilenummer - KA79M15 |
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Ähnliche Beschreibung - KA79M15 |
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