Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ32H Datenblatt(PDF) 2 Page - Infineon Technologies AG |
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BUZ32H Datenblatt(HTML) 2 Page - Infineon Technologies AG |
2 / 10 page BUZ 32 H Rev. 2.4 Page 2 2009-11-10 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V(BR)DSS 200 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C IDSS - - 10 0.1 100 1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 10 V, ID = 6 A RDS(on) - 0.3 0.4 Ω |
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