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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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PZTA14 Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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PZTA14 Datenblatt(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page  2008-03-07 1 PZTA14 1 2 3 4 NPN Silicon Darlington Transistor • For general AF applications • High collector current • High current gain • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 Type Marking Pin Configuration Package PZTA14 PZTA14 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCES 30 V Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 Collector current IC 300 mA Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- TS ≤ 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 17 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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Ähnliche Beschreibung - PZTA14 |
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