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2N2905 Datenblatt(PDF) 2 Page - Microsemi Corporation

Teilenummer 2N2905
Bauteilbeschribung  PNP SWITCHING SILICON TRANSISTOR
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N2905 Datenblatt(HTML) 2 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0186 Rev. 1 (101764)
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERTICS
(3)
Forward-Current Transfer Ratio
hFE
IC = 0.1mAdc, VCE = 10Vdc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
20
35
40
75
IC = 1.0mAdc, VCE = 10Vdc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
25
50
40
100
175
450
175
450
IC = 10mAdc, VCE = 10Vdc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
35
75
40
100
IC = 150mAdc, VCE = 10Vdc
2N2904, 2N2904A / AL
2N2905, 2N2905A / AL
40
100
120
300
IC = 500mAdc, VCE = 10Vdc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
20
30
40
50
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
0.4
1.6
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 150mA, IB = 15mAdc
IC = 500mA, IB = 50mAdc
1.3
2.6


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