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2N2904A Datenblatt(PDF) 1 Page - Microsemi Corporation

Teilenummer 2N2904A
Bauteilbeschribung  PNP SWITCHING SILICON TRANSISTOR
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N2904A Datenblatt(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/290
T4-LDS-0186 Rev. 1 (101764)
Page 1 of 4
DEVICES
LEVELS
2N2904
2N2905
JAN
2N2904A
2N2905A
JANTX
2N2904AL
2N2905AL
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N2904
2N2905
2N2904A, L
2N2905A, L
Unit
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
600
mAdc
Total Power Dissipation
@ TA = +25°C
(1)
@ TC = +25°C
(2)
PT
0.8
3.0
W/°C
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
Thermal Resistance, Junction-to-Ambient
RθJC
50
°C/W
NOTES:
1/ Derate linearly 3.43W/°C for TA > +25°C
2/ Derate linearly 17.2W/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
V(BR)CEO
Vdc
IC = 10mAdc
2N2904, 2N2905
2N2904A, 2N2905A / AL
40
60
Collector-Emitter Cutoff Voltage
VCE = 40Vdc
VCE = 60Vdc
2N2904, 2N2905
2N2904A, 2N2905A / AL
ICES
1.0
µAdc
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 60Vdc
2N2904, 2N2905
2N2904A, 2N2905A / AL
All Types
ICBO
20
10
10
ηAdc
ηAdc
µAdc
Emitter-Base Cutoff Current
VEB = 3.5Vdc
VEB = 5.0Vdc
IEBO
50
10
ηAdc
µAdc
TO-39 (TO-205AD)
2N2904, 2N2904A
2N2905, 2N2905A
TO-5
2N2904AL, 2N2905AL


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