Datenblatt-Suchmaschine für elektronische Bauteile |
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BCPA14 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCPA14 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual BCPA14 NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente SOT-89 ELECTRICAL CHARACTERISTICS (Tamb=25 C) o P Symbol Min. Typ. Max. Unit arameter Collector-Base Breakdown Voltage IC=100uA, IE=0 IC= 100uA, IB=0 IE=10uA, IC=0 VCB=30V, IE=0 VCB=10V,f=1MHz,IE=0 IC=100mA, IB=0.1mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC =10mA, f=100MHz BVCBO 30 V Collector-Emitter Breakdown Voltage BVCEO BVEBO V V 10 20K nA Emitter-Base Breakdown Voltage 10K pF ICBO Cob *VCE(sat) *VBE(on) *hFE1 *hFE2 fT - - - - - 6 - - - - - 125 - - - - - - - 2.0 1.5 100 100 MHz V V Collector Cut-off Current Collector Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Voltage, On DC Current Gain DC Current Gain Transition Frequency *Pulse Test: Pulse Width 380us, Duty Cycle 2% 30 Test Conditions VCE=5V, IC=100mA ≦ ≦ Collector Cut-off Current ICEO - - - - - nA VEB=10V, IC=0 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 q TYP. M 0.70 REF. Description The BCPA14 is a Darlington amplifier transistor designed for applications requiring exremely high current gain. Absolute Maximum Ratings at TA=25 C Collector to Base Voltage Emitter to Base Voltage Collect Current Total Power Dissipation Operating Junction and Storage Temperature Range mA V V V IC C W VCBO VCEO PD Tj, Tstg 30 30 10 500 1.0 -55~+150 Parameter Symbol Ratings Unit o o Collector to Emitter Voltage VEBO 01-Jun-2002 Rev. A Page 1 of 2 |
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Ähnliche Beschreibung - BCPA14 |
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