Datenblatt-Suchmaschine für elektronische Bauteile |
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CZT5401 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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CZT5401 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual CZT5401 PNP Transistor Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente The CZT5401 is designed for general purpose applications requiring high breakdown voltages. ELECTRICAL CHARACTERISTICS Tamb=25 C unlessotherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100uA,IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA,IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE= -10uA,IC=0 -5 V Collector cut-off current ICBO VCB= -120V,IE=0 -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -50 nA hFE 1 VCE= -5V, IC= -1mA 50 400 DC current gain hFE 2 VCE=-5V, IC= -10mA 80 Collector-emitter saturation voltage VCE(sat) IC=-10mA,IB= -1mA -200 mV Base-emitter saturation voltage VBE(sat) IC=-10mA,IB= -1mA V Transition frequency fT VCE=-10V,IC=-10mA, f = 100MHz 100 MHz _ 160 -1 Collector output capacitance Cob VCB=-10V, f=1MHz,IE=0 pF 6 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ CLASSIFICATION OF hFE Rank A N C Range 80-200 100-240 160-400 _ _ o hFE 3 VCE= -5V, IC= -50mA 50 _ _ _ 300 1 _ VCE(sat) IC=-50mA,IB= -5mA -500 _ 2 _ _ 1 VBE(sat) IC=-50mA,IB= -5mA -1 _ _ 2 SOT-223 01-Jun-2002 Rev. A Page 1 of 2 REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13 C TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 C 10 C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 5 1.40 1.80 Description 5 4 0 1 Date Code B C E MAXIMUM RATINGS* (Tamb =25 , unless otherwise specified) C o Symbol Parameter Value Collector Current-Continuous -600 IC Tstg TJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage -5 1.5 V mA W Storage Temperature -55~-150 C O VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V Units |
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