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CZT5401 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Teilenummer CZT5401
Bauteilbeschribung  Epitaxial Planar Transistor
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Hersteller  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

CZT5401 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
CZT5401
PNP Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
The CZT5401 is designed for general
purpose applications requiring high
breakdown voltages.
ELECTRICAL CHARACTERISTICS Tamb=25 C unlessotherwise specified
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100uA,IE=0
-160
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA,IB=0
-150
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10uA,IC=0
-5
V
Collector cut-off current
ICBO
VCB= -120V,IE=0
-50
nA
Emitter cut-off current
IEBO
VEB=-3V,IC=0
-50
nA
hFE 1
VCE= -5V, IC= -1mA
50
400
DC current gain
hFE 2
VCE=-5V, IC= -10mA
80
Collector-emitter saturation voltage
VCE(sat)
IC=-10mA,IB= -1mA
-200
mV
Base-emitter saturation voltage
VBE(sat)
IC=-10mA,IB= -1mA
V
Transition frequency
fT
VCE=-10V,IC=-10mA,
f = 100MHz
100
MHz
_
160
-1
Collector output capacitance
Cob
VCB=-10V, f=1MHz,IE=0
pF
6
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
CLASSIFICATION OF hFE
Rank
A
N
C
Range
80-200
100-240
160-400
_
_
o
hFE 3
VCE= -5V, IC= -50mA
50
_
_
_
300
1
_
VCE(sat)
IC=-50mA,IB= -5mA
-500
_
2
_
_
1
VBE(sat)
IC=-50mA,IB= -5mA
-1
_
_
2
SOT-223
01-Jun-2002 Rev. A
Page 1 of 2
REF.
Min.
Max.
REF.
Min.
Max.
A
6.70
7.30
B
13 C
TYP.
C
2.90
3.10
J
2.30 REF.
D
0.02
0.10
1
6.30
6.70
E
0 C
10 C
2
6.30
6.70
I
0.60
0.80
3
3.30
3.70
H
0.25
0.35
4
3.30
3.70
5
1.40
1.80
Description
5 4 0 1
Date Code
B
C
E
MAXIMUM RATINGS* (Tamb =25 , unless otherwise specified)
C
o
Symbol
Parameter
Value
Collector Current-Continuous
-600
IC
Tstg
TJ,
Junction and
Total Power Dissipation
VEBO
PD
Emitter-Base Voltage
-5
1.5
V
mA
W
Storage Temperature
-55~-150
C
O
VCEO
Collector-Emitter Voltage
-150
V
VCBO
Collector-Base Voltage
-160
V
Units


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