Datenblatt-Suchmaschine für elektronische Bauteile |
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PZT772 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT772 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual PZT772 PNP Transistor Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente The PZT772 is designed for using in output stage of 2W amplifier, voltage regulator, DC-DC converter and driver. ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100uA -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA -30 V Emitter-base breakdown voltage V(BR)EBO IE= -10uA -5 V Collector cut-off current ICBO VCB= -30 V -1 uA Emitter cut-off current IEBO VEB=-3V 1 uA hFE 1 VCE= -2V, IC= -20mA 30 500 DC current gain hFE 2 VCE=-2V, IC= -1mA 100 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -2 V Transition frequency fT VCE=-20V,IC=-20mA, f = 100MHz 80 MHz _ 160 -0.3 -1 Collector output capacitance Cob VCB=-10V, f=1MHz pF 55 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ CLASSIFICATION OF hFE2 Rank Q P E Range 100-200 160-320 250-500 _ _ _ SOT-223 01-Jun-2002 Rev. A Page 1 of 2 REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13 C TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 C 10 C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 5 1.40 1.80 Description 7 7 2 Date Code B C E MAXIMUM RATINGS* (Tamb =25 , unless otherwise specified) C o Symbol Parameter Value Collector Current-Continuous -3 IC Tstg TJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage -5 1.5 V A W Storage Temperature -55~-150 C O VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -40 V Units |
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