Datenblatt-Suchmaschine für elektronische Bauteile |
|
MSAFA1N100D Datenblatt(PDF) 1 Page - Microsemi Corporation |
|
MSAFA1N100D Datenblatt(HTML) 1 Page - Microsemi Corporation |
1 / 3 page MSC1054.PDF 3/ 22/01 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25 °C unless otherwise specified MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications DESCRIPTION: • N-Channel enhancement mode high density MOSFET die • Passivation: oxynitride, 4um • Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. • Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach FEATURES: • Low On-state resistance • Avalanche and Surge Rated • High Freq. Switching • Ultra Low Leakage Current • UIS rated • Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix MAXIMUM RATINGS: STATIC ELECTRICAL CHARACTERISTICS: 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 SYMBOL PARAMETER VALUE UNIT VDSS Drain - Source Voltage 1000 Volts VGS Gate - Source Voltage ±20 Volts ID1 Continuous Drain Current @ TC = 25 °°°°C 1 Amps ID2 Continuous Drain Current @ TC = 100 °°°°C .8 Amps IDM1 Pulsed Drain Current x x x x @ TC = 25°°°°C 4 Amps IAR Avalanche Current 1 Amps EAR Repetitive Avalanche Energy TBD mJ EAS Single Pulse Avalanche Energy TBD mJ TJ, TSTG Operating and Storage: Junction Temperature Range -55 to 150 °°°°C SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT BVDSS Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA) 1000 Volts VGS(TH)2 Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37 °°°°C 3.4 Volts VGS(TH)1 Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25 °°°°C 2 3.5 4.5 Volts RDS(ON)1 Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25 °°°°C) 12.5 13.5 ohm RDS(ON)2 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37 °°°°C) 12.5 ohm RDS(ON)3 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25 °°°°C) 11.5 ohm RDS(ON)4 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60 °°°°C) 15 ohm RDS(ON)5 Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125 °°°°C) 23.5 ohm IDSS1 Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25 °°°°C) 10 uA IDSS2 Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37 °°°°C) 1 uA IDSS3 Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125 °°°°C) 100 uA IGSS1 Gate-Source Leakage Current (VGS = ±20V, VCE =0V) ±100 nA IGSS2 Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37 °°°°C 10 nA IGSS3 Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125 °°°°C 500 nA |
Ähnliche Teilenummer - MSAFA1N100D |
|
Ähnliche Beschreibung - MSAFA1N100D |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |