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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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KTB1424 Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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KTB1424 Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 1 page  2007. 5. 21 1/1 SEMICONDUCTOR TECHNICAL DATA KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 2 GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) Complementary to KTD2424. MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS TO-220IS 0.76+0.09/-0.05 A B C D E F G 0.5+0.1/-0.05 H 1.2+0.25/-0.1 1.5+0.25/-0.1 J K L M N P Q R 1 2 3 L N M D N H E R L S 0.5 Typ S D A C 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ Φ3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -10 V Collector Current IC -3 A Base Current IB -0.5 A Collector Power Dissipation (Tc=25 ) PC 25 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -20 A Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -100 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -60 - - V DC Current Gain hFE(1) VCE=-2V, IC=-1A 3000 - - hFE(2) VCE=-2V, IC=-3A 1000 - - Saturation Voltage Collector-Emitter VCE(sat) IC=-3A, IB=-30mA - - -1.5 V Base-Emitter VBE(sat) IC=-3A, IB=-30mA - - -2.8 |
Ähnliche Teilenummer - KTB1424 |
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Ähnliche Beschreibung - KTB1424 |
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