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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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KTB2510 Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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KTB2510 Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 3 page  2008. 4. 18 1/3 SEMICONDUCTOR TECHNICAL DATA KTB2510 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 2 HIGH POWER AMPLIFIER DARLINGTON APPLICATION. FEATURES ・Complementary to KTD1510 ・Recommended for 60W Audio Amplifier Output Stage. MAXIMUM RATING (Ta=25 ℃) 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-3P(N) K A D B d P PT M Q 12 3 A 15.9 MAX MILLIMETERS DIM B 4.8 MAX C20.0 0.3 D 2.0 0.3 d 1.0+0.3/-0.25 E2.0 F 1.0 G 3.3 MAX H9.0 I4.5 J 2.0 K 1.8 MAX L 20.5 0.5 P 5.45 0.2 Q Φ3.2 0.2 T 0.6+0.3/-0.1 2.8 M + _ + _ + _ + _ + _ ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1 A Collector Power Dissipation (Tc=25 ℃) PC 100 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -100 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 μA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-30mA, IB=0 -150 - - V DC Current Gain hFE VCE=-4V, IC=-7A 5000 12000 20000 Collector-Emitter Saturation Voltage VCE(sat) IC=-7A, IB=-7mA - - -2.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-7A, IB=-7mA - - -3.0 V Transition Frequency fT VCE=-12V, IC=-2A - 50 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 230 - pF COLLECTOR BASE EMITTER 70 Ω EQUIVALENT CIRCUIT |
Ähnliche Teilenummer - KTB2510 |
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Ähnliche Beschreibung - KTB2510 |
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