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BC337 Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer BC337
Bauteilbeschribung  Amplifier Transistors
Download  5 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC337 Datenblatt(HTML) 3 Page - ON Semiconductor

  BC337_09 Datasheet HTML 1Page - ON Semiconductor BC337_09 Datasheet HTML 2Page - ON Semiconductor BC337_09 Datasheet HTML 3Page - ON Semiconductor BC337_09 Datasheet HTML 4Page - ON Semiconductor BC337_09 Datasheet HTML 5Page - ON Semiconductor  
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BC337, BC337−25, BC337−40
http://onsemi.com
3
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
1.0 s
TJ = 135°C
TA = 25°C
TC = 25°C
dc
dc
(APPLIES BELOW RATED VCEO)
1000
10
100
1.0
3.0
10
30
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Active Region − Safe Operating Area
IC, COLLECTOR CURRENT (MA)
Figure 3. DC Current Gain
100
1000
10
1000
0.1
10
100
100
1.0
TJ = 135°C
100
ms
VCE = 1 V
TJ = 25°C
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
0.1
1
1
10
100
1000
-2
-1
0
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
10
100
1
1.0
0.8
0.6
0.4
0.2
0
1
10
1000
100
10
100
TJ = 25°C
IC = 10 mA
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
VCE(sat) @ IC/IB = 10
qVC for VCE(sat)
qVB for VBE
Cob
Cib
100 mA
300 mA
500 mA


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