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MJW21193 Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer MJW21193
Bauteilbeschribung  Silicon Power Transistors
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© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 4
1
Publication Order Number:
MJW21193/D
MJW21193 (PNP)
MJW21194 (NPN)
Silicon Power Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain −
hFE = 20 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
Collector Current − Continuous
Collector Current − Peak (Note 1)
IC
16
30
Adc
Base Current − Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RθJC
0.7
°C/W
Thermal Resistance,
Junction−to−Ambient
RθJA
40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
Device
Package
Shipping
ORDERING INFORMATION
MJW21193
TO−247
30 Units/Rail
MARKING DIAGRAM
x
= 3 or 4
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
MJW21193G
TO−247
(Pb−Free)
30 Units/Rail
MJW21194
TO−247
30 Units/Rail
MJW21194G
TO−247
(Pb−Free)
30 Units/Rail
http://onsemi.com
TO−247
CASE 340L
STYLE 3
1 2 3
MJW2119x
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER


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