RYU002N05 datasheet(4/6 Pages) ROHM

Teilenummer	RYU002N05

Bauteilbeschribung	0.9V Drive Nch MOSFET

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Hersteller	ROHM [Rohm]

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Data Sheet

RYU002N05

0.01

0.1

1

0

0.5

1

1.5

VGS=0V

Pulsed

Ta= 125C

Ta= 75C

Ta= 25C

Ta= 25C

0.1

1

10

0.01

0.1

1

VDS= 10V

Pulsed

Ta=25C

Ta=25C

Ta=75C

Ta=125C

1

10

100

1000

0.01

0.1

1

tf

td(on)

td(off)

Ta=25C

VDD=25V

VGS=4.5V

RG=10

tr

0

1

2

3

4

0

0.5

1

1.5

0

1000

2000

3000

4000

5000

01234

5678

Ta=25C

Pulsed

ID= 0.20A

ID= 0.01A

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

Fig.13 Switching Characteristics

DRAIN-CURRENT : ID[A]

1

10

100

1000

0.01

0.1

1

10

100

Ciss

Coss

Crss

Ta=25C

f=1MHz

VGS=0V

Fig.15 Typical Capacitance

vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

GATE-SOURCE VOLTAGE : VGS[V]

Fig.11 Reverse Drain Current

vs. Sourse-Drain Voltage

SOURCE-DRAIN VOLTAGE : VSD [V]

Fig.10 Forward Transfer Admittance

vs. Drain Current

DRAIN-CURRENT : ID[A]

Ta=25C

VDD=25V

ID= 0.2A

RG=10

Pulsed

4/5

2011.04 - Rev.A

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