Datenblatt-Suchmaschine für elektronische Bauteile |
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TS13003HVCTA3G Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13003HVCTA3G Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page TS13003HV High Voltage NPN Transistor 1/5 Version: D07 TO-92 PRODUCT SUMMARY BVCEO 530V BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TS13003HVCT B0 TO-92 1Kpcs / Bulk TS13003HVCT B0G TO-92 1Kpcs / Bulk TS13003HVCT A3 TO-92 2Kpcs / Ammo TS13003HVCT A3G TO-92 2Kpcs / Ammo Note: “G” denote for Halogen Free Product Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 900V V Collector-Emitter Voltage VCEO 530V V Emitter-Base Voltage VEBO 10 V DC 1.5 Collector Current Pulse IC 3 A Maximum Power Dissipation PD 0.5 W Ptot 1.96 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 64 oC/W Junction to Ambient Thermal Resistance RӨJA 248 oC/W Pin Definition: 1. Emitter 2. Collector 3. Base |
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