Datenblatt-Suchmaschine für elektronische Bauteile |
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ST1S09APUR Datenblatt(PDF) 7 Page - STMicroelectronics |
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ST1S09APUR Datenblatt(HTML) 7 Page - STMicroelectronics |
7 / 18 page ST1S09 Electrical characteristics Doc ID 13632 Rev 4 7/18 Refer to Figure 22 application circuit VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, C1 = 4.7 µF, C2 = 22 µF, L1 = 2.7 µH, TJ = -30 to 125 °C (unless otherwise specified. Typical values are referred to 25 °C) Table 7. Electrical characteristics for ST1S09IPU Symbol Parameter Test conditions Min. Typ. Max. Unit FB Feedback voltage 784 800 816 mV IFB VFB pin bias current 600 nA VI Minimum input voltage IO = 10 mA to 2 A 2.7 V OVP Over voltage protection threshold VO rising 1.05 VO 1.1 VO V Over voltage protection hysteresis VO falling 5 % IQ Quiescent current VINH > 1.2 V, not switching 1.5 2.5 mA VINH < 0.4 V, T = - 30 °C to 85 °C 1 µA IO Output current VI = 2.7 to 5.5 V (1) 2A VINH Inhibit threshold Device ON, VI = 2.7 to 5.5 V 1.3 V Device ON, VI = 2.7 to 5 V 1.2 Device OFF 0.4 IINH Inhibit pin current 2µA %VO/ΔVI Output line regulation VI = 2.7 V to 5.5 V, IO = 100 mA (1) 0.16 %VO/ ΔVI %VO/ΔIO Output load regulation IO = 10 mA to 2 A (1) 0.2 0.6 %VO/ ΔIO PWMfS PWM switching frequency VFB = 0.65 V 1.2 1.5 1.8 MHz DMAX Maximum duty cycle 80 87 % RDSON-N NMOS switch on resistance ISW = 750 mA 0.1 Ω RDSON-P PMOS switch on resistance ISW = 750 mA 0.1 Ω ISWL Switching current limitation (1) 2.5 2.9 3.5 A ν Efficiency (1) IO = 10 mA to 100 mA, VO = 3.3 V 65 % IO = 100 mA to 2 A, VO = 3.3 V 82 87 TSHDN Thermal shutdown 150 °C THYS Thermal shutdown hysteresis 20 °C %VO/ΔIO Load transient response IO = 100 mA to 1 A, TA = 25 °C tR = tF ≥ 200 ns (1) -10 +10 %VO %VO/ΔIO Short circuit removal response IO = 10 mA to IO = short, TA = 25 °C (1) -10 +10 %VO 1. Guaranteed by design, but not tested in production. |
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