BCP160T datasheet(1/4 Pages) BEREX

Teilenummer	BCP160T

Bauteilbeschribung	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

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Hersteller	BEREX [BeRex Corporation]

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BeRex, Inc. 1735 North 1

st Street #302 San Jose, CA 95112 tel. (408) 452-5595

September 2011

Specifications are subject to change without notice. ©BeRex 2011

Rev. 1.2

BCP160T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)

The BeRex BCP160T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 1600 micron gate width

making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5

GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band

applications. The BCP160T is produced using state of the art metallization with SI3N4 passivation and is screened to

assure reliability

.

PRODUCT FEATURES



33 dBm Typical Output Power



10.5 dB Typical Gain @ 12 GHz



0.25 X 1600 Micron Recessed Gate

APPLICATIONS



Commercial



Military / Hi-Rel.



Test & Measurement

ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C

SYMBOL

PARAMETER/TEST CONDITIONS

TEST

FREQ.

MIN.

TYPICAL

MAX.

UNIT

P1dB

Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)

12 GHZ

32.0

33.0

dBm

G1dB

Gain @ P1dB (Vds = 8V, Ids = 50% Idss)

12 GHZ

9.5

10.5

dB

PAE

PAE @ P1dB (Vds = 8V, Ids = 50% Idss)

12 GHZ

60

%

Idss

Saturated Drain Current (Vgs = 0V, Vds = 1.0V)

320

480

640

mA

Gm

Transconductance (Vds = 3V, Vgs = 50% Idss)

640

mS

Vp

Pinch-off Voltage (Ids = 1.6 mA, Vds = 2V)

-2.5

-1.1

-0.5

V

BVgd

Drain Breakdown Voltage (Ig = 1.6 mA, source open)

-15

-12

V

BVgs

Source Breakdown Voltage (Ig = 1.6 mA, drain open)

-13

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

33

°C/W

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