Datenblatt-Suchmaschine für elektronische Bauteile |
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BCP160T Datenblatt(PDF) 1 Page - BeRex Corporation |
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BCP160T Datenblatt(HTML) 1 Page - BeRex Corporation |
1 / 4 page www.berex.com BeRex, Inc. 1735 North 1 st Street #302 San Jose, CA 95112 tel. (408) 452-5595 September 2011 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 BCP160T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm) The BeRex BCP160T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 1600 micron gate width making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP160T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability . PRODUCT FEATURES 33 dBm Typical Output Power 10.5 dB Typical Gain @ 12 GHz 0.25 X 1600 Micron Recessed Gate APPLICATIONS Commercial Military / Hi-Rel. Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHZ 32.0 33.0 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHZ 9.5 10.5 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHZ 60 % Idss Saturated Drain Current (Vgs = 0V, Vds = 1.0V) 320 480 640 mA Gm Transconductance (Vds = 3V, Vgs = 50% Idss) 640 mS Vp Pinch-off Voltage (Ids = 1.6 mA, Vds = 2V) -2.5 -1.1 -0.5 V BVgd Drain Breakdown Voltage (Ig = 1.6 mA, source open) -15 -12 V BVgs Source Breakdown Voltage (Ig = 1.6 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 33 °C/W |
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Ähnliche Beschreibung - BCP160T |
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