Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC1061 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1061 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1061 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 50 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 4 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=4V 1.5 V ICBO Collector cut-off current VCB=25V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=4V 35 hFE-2 DC current gain IC=1A ; VCE=4V 35 320 fT Transition frequency IC=0.5A ; VCE=4V 5.0 MHz hFE-2 classifications A B C D 35-70 60-120 100-200 160-320 |
Ähnliche Teilenummer - 2SC1061 |
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Ähnliche Beschreibung - 2SC1061 |
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