Datenblatt-Suchmaschine für elektronische Bauteile |
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LB11660FV Datenblatt(PDF) 3 Page - Sanyo Semicon Device |
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LB11660FV Datenblatt(HTML) 3 Page - Sanyo Semicon Device |
3 / 8 page LB11660FV No.8318-3/8 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit PRE output low saturation voltage VPL IO = 5mA 0.2 0.4 V PRE output high saturation voltage VPH IO = -20mA 0.9 1.2 V Current limiter VRf VCC - VM 450 500 550 mV PWM output pin high-level voltage VPWMH 2.2 2.5 2.8 V PWM output pin low-level voltage VPWML 0.4 0.5 0.7 V PWM external C charge current IPWM1 -23 -18 -14 μA PWM external C discharge current IPWM2 18 24 30 μA PWM oscillator frequency FPWM C = 200pF 19 23 27 kHz Hall sensor input sensitivity VHN Zero peak value (including offset and hysteresis) 15 25 mV FG output pin low-level voltage VFG/RD IFG/RD = 5mA 0.2 0.3 V FG output pin leakage current IFGL/IRDL VFG/RD = 7V 30 μA Thermal protection circuit THD Design target value*3 150 180 210 °C *3: This is a design guarantee and is not tested in individual units. The thermal protection circuit is included to prevent any thermal damage to the IC. Since this would imply operation outside the IC's guaranteed temperature range, the application thermal design must be such that the thermal protection circuit will not operate if the fan is operating constantly. Package Dimensions Pin Assignment unit : mm (typ) 3178B Truth Table IN- IN+ VTH CPWM CT OUT1 OUT2 PRE1 PRE2 FG Mode High Low High Off Low High Low Low High Low High Off High High Low Off During rotation − drive High Low Off Off Low High Low Low High High Low Low Off Off High Low Off During rotation − regeneration High Low Off Off Low High Low Low High - - High Off Off High Low Off Lock protection CPWM – High is the state where CPWM > VTH, and CPWM– Low is the state where CPWM < VTH. 5.2 0.22 0.65 (0.33) 18 9 16 0.15 SANYO : SSOP16(225mil) Top view OUT2 1 2 3 4 11 15 8 5 10 9 7 12 6 13 14 16 VCC VTH VM RMI CPWM FG IN+ HB IN- CT 6VREG GND OUT1 PRE2 PRE1 LB11660FV |
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