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LB11988V Datenblatt(PDF) 2 Page - Sanyo Semicon Device |
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LB11988V Datenblatt(HTML) 2 Page - Sanyo Semicon Device |
2 / 7 page LB11988V No.A0377-2/7 Electrical Characteristics at Ta = 25 °C, VCC = 12V, VS = 12V Ratings Parameter Symbol Conditions min typ max unit VCC supply current ICC RL = 560Ω (Y) 15 24 mA Output VOsat1 IO = 500mA, Rf = 0.5Ω, Sink+Source (with saturation prevention) 2.1 2.6 Output saturation voltage VOsat2 IO = 1.0A, Rf = 0Ω, Sink+Source (with saturation prevention) 2.6 3.5 V Output leakage current IOleak 1.0 mA Hall amplifier Input offset voltage Voff(HALL) -6 +6 mV Input bias current Ib(HALL) VIN, WIN 1 3 µA Common-mode input voltage Vcm(HALL) 3 VCC-3 V FR Threshold voltage VFRTH 4 8 V Input bias current Ib(FR) -5 µA Current limit LIM pin current limit level ILIM Rf = 0.5 Ω, Hall input logic fixed (U, V, W = H, H, L) 1 A Saturation Saturation prevention circuit lower set voltage VOsat(DET) RL = 560Ω (Y),Rf = 0.5Ω Voltage between each OUT and RF 0.28 V FG Amplifier Output “High” voltage Vfgoh(SH) 11.8 Output “Low” voltage Vfgol(SH) 0.3 V Hysteresis width Vhys 23 mV TSD operating temperature T-TSD Design target value* 170 °C *: T-TSD is not measured because it stands for design target. Package Dimensions unit : mm (typ) 3315 ILB01791 -30 -10 10 30 50 70 90 0 0.1 0.3 0.2 0.4 0.5 0.6 0.30 Ambient Temperature, Ta- °C Pd max - Ta Independent IC SANYO : SSOP24J(275mil) 112 13 24 0.15 9.75 0.8 (0.48) 0.3 |
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