Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4941 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4941 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4941 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 800 V VCBO Collector-base voltage IC=1mA ;IE=0 1500 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 100 μA ICEO Collector cut-off current VCE=RatedVCEO; IB=0 100 μA IEBO Emitter cut-off current VEB=RatedVEBO; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=1mA ; VCE=5V 7 fT Transition frequency IC=0.6A ; VCE=10V 8 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 3.5 μs tf Fall time IC=3A IB1=0.6A; IB2=-1.2A VBB2=4V RL=85Ω 0.3 μs |
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Ähnliche Beschreibung - 2SC4941 |
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