Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1126 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1126 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1126 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 0.1A 3.5 V ICBO Collector Cutoff Current VCB= 120V; IE=0 100 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 10 μA hFE DC Current Gain IC= 5A; VCE= 3V 1000 20000 VECF C-E Diode Forward Voltage IF= 10A 3.0 V Switching times ton Turn-on Time 0.8 μs toff Turn-Off Time IC= 5A, IB1= -IB2= 10mA 8.0 μs isc Website:www.iscsemi.cn 2 |
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Ähnliche Beschreibung - 2SD1126 |
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