Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1170 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1170 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA B 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 3A; VCE= 2V 2000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 70 pF fT Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 50 MHz Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 5.5 μs tf Fall Time VCC= 30V, RL= 10Ω, IC= 3A; IB1= -IB2= 3mA, 1.5 μs isc Website:www.iscsemi.cn 2 |
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Ähnliche Beschreibung - 2SD1170 |
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