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2SD1311 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1311 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1311 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE DC Current Gain IC= 0.5A; VCE= 5V 40 200 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 20 MHz isc Website:www.iscsemi.cn 2 |
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