Datenblatt-Suchmaschine für elektronische Bauteile |
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BD132 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD132 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD132 DESCRIPTION ・ ・Complement to type BD131 ・With TO-126 package ・High current (Max:- 3A) ・Low voltage (Max: -45V) APPLICATIONS ・For general purpose power applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -45 V VCEO Collector-emitter voltage Open base -45 V VEBO Emitter -base voltage Open collector -4 V IC Collector current (DC) -3 A ICM Collector current-Peak -6 A IBM Base current-Peak -0.5 A Pt Total power dissipation Tmb≤60℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a Thermal resistance from junction to ambient 100 K/W Rth j-mb Thermal resistance from junction to mounting base 6 K/W |
Ähnliche Teilenummer - BD132 |
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Ähnliche Beschreibung - BD132 |
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