Datenblatt-Suchmaschine für elektronische Bauteile |
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BDY57 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY57 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDY57 120 VCBO Collector-base voltage BDY58 Open emitter 160 V BDY57 80 VCEO Collector-emitter voltage BDY58 Open base 125 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 25 A IB Base current 6 A PT Total power dissipation TC=25℃ 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.0 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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Ähnliche Beschreibung - BDY57 |
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