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GI850 Datenblatt(Datasheet) 2 Page - Vishay Siliconix

Teile-Nr. GI850
Beschreibung  Fast Switching Plastic Rectifier
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Hersteller  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88630
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 10-Nov-09
GI850 thru GI858
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curves
Fig. 2 - Maximum Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
GI850
GI851
GI852
GI854
GI856
GI858
UNIT
Maximum
instantaneous
forward voltage
3.0 A
TA = 25 °C
VF
1.25
V
9.4 A
TJ = 175 °C
1.10
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
10
μA
TA = 100 °C
150
150
200
250
300
500
Maximum reverse
recovery current
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
IRM(REC)
200
ns
Maximum reverse
recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
trr
2.0
A
Typical junction
capacitance
4.0 V, 1 MHz
CJ
28
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI850
GI851
GI852
GI854
GI856
GI858
UNIT
Typical thermal resistance
RθJA
(1)
22
°C/W
RθJL
(1)
8.0
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GI856-E3/54
1.1
54
1400
13" diameter paper tape and reel
GI856-E3/73
1.1
73
1000
Ammo pack packaging
Temperature (°C)
30
70
90
110
130
150
170
2.0
6.0
8.0
4.0
0
50
0.8" x 0.8" x 0.04"
(20 mm x 20 mm x 1 mm)
Copper Heatsink
L = Lead Length
L = 0.25
" (6.3
mm)
L =
0.375
" (9.5
mm)
T
A = Ambient Temperature
T
L = Lead Temperature
0.375" (9.5 mm) Lead Length
1
10
100
100
1000
10
Number of Cycles at 60 Hz
T
J = 150 °C
T
J = 25 °C
8.3 ms Single Half Sine-Wave
Repetitive
Non-Repetitive
T
J = 150 °C
T
J = 25 °C




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