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BU2522DF Datenblatt(Datasheet) 2 Page - Inchange Semiconductor Company Limited

Teile-Nr. BU2522DF
Beschreibung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2522DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0,L= 25mH
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA ;IC= 0
7.5
13.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A ;IB= 1.2A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A ;IB= 1.2A
1.3
V
ICES
Collector Cutoff Current
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0;TC=125℃
0.25
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.5V; IC= 0
100
300
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
10
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
5
8
VECF
C-E Diode Forward Voltage
IF= 6A
2.0
V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1MHz
115
pF
isc Website:www.iscsemi.cn




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