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BU2522DF Datenblatt(Datasheet) 1 Page - Inchange Semiconductor Company Limited

Teile-Nr. BU2522DF
Beschreibung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2522DF
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
high resolution monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-peak
25
A
IB
B
Base Current-Continuous
6
A
IBM
Base Current-peak
9
A
PC
Collector Power Dissipation
@TC=25℃
45
W
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.8
K/W
isc Website:www.iscsemi.cn




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