Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2522DF Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU2522DF Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2522DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 10 A ICM Collector Current-peak 25 A IB B Base Current-Continuous 6 A IBM Base Current-peak 9 A PC Collector Power Dissipation @TC=25℃ 45 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 K/W isc Website:www.iscsemi.cn |
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Ähnliche Beschreibung - BU2522DF |
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