GSOT05L-V datasheet(2/5 Pages) VISHAY

Teilenummer	GSOT05L-V

Bauteilbeschribung	Single-Line ESD-Protection Diode in SOT-23

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Hersteller	VISHAY [Vishay Siliconix]

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For technical questions, contact: ESDprotection@vishay.com

Document Number: 85181

2

Rev. 1.2, 01-Jul-10

GSOT05L-V

Vishay Semiconductors Single-Line ESD-Protection Diode in

SOT-23

BiAs-MODE (bidirectional asymmetrical protection mode)

With the GSOT05L-V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground

and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is

between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between data line

and ground offers a high isolation to the ground line. The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode

becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The

clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance

(resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the

protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.

Due to the different clamping levels in forward and reverse direction the GSOT05L-V clamping behaviour is bidirectional and

asymmetrical (BiAs).

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 3 to 1).

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330

Ω/150 pF)

Fig. 2 - 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

20422

L1

1

2

3

Ground

BiAs

ELECTRICAL CHARACTERISTICS GSOT05L-V

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nlines

-

1

lines

Reverse stand off voltage

at IR = 1 µA

VRWM

5.5

6.1

7

V

Reverse current

at VR = 5.5 V

IR

--

1

µA

Reverse breakdown voltage

at IR = 1 mA

VBR

66.75

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-6.9

9

V

at IPP = IPPM = 13 A

-

10

12

V

Forward clamping voltage

at IPP = 1 A

VF

-1

1.3

V

at IPP = IPPM = 13 A

-

2.6

3

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

100

120

pF

at VR = 2.5 V; f = 1 MHz

-

60

-

pF

0 %

20 %

40 %

60 %

80 %

100 %

120 %

- 10 0 10 20 30 40 50 60 70 80 90 100

Time (ns)

Rise time = 0.7 ns to 1 ns

53 %

27 %

20557

0 %

20 %

40 %

60 %

80 %

100 %

010

20

30

40

Time (µs)

20 µs to 50 %

8 µs to 100 %

20548

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