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TIG111GMH Datenblatt(PDF) 1 Page - Sanyo Semicon Device |
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TIG111GMH Datenblatt(HTML) 1 Page - Sanyo Semicon Device |
1 / 5 page TIG111GMH No.9014-1/5 Features • Low-saturation voltage • Ultrahigh speed switching • Enhansment type Specifications Absolute Maximum Ratings at Ta=25°C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 600 V Gate-to-Emitter Voltage VGES ±30 V Collector Current (DC) IC*1 Limited by Tjmax 32 A IC*2 Limited by Tjmax @Tc=25°C*3 21 A @Tc=100°C*3 10 A Collector Current (Pulse) ICP Pulse width Limited by Tjmax 128 A Allowable Power Dissipation PD 3W Tc=25°C (SANYO’s ideal heat dissipation condition)*3 55 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Note : *1 Shows chip capability *2 Collector current is calculated from the following for mula *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions unit : mm (typ) 7504-003 Ordering number : EN9014 92811QJ TKIM TC-00002634 SANYO Semiconductors DATA SHEET TIG111GMH N-Channel Non Punch Through IGBT High Power High Speed Switching Applications http://semicon.sanyo.com/en/network Product & Package Information • Package : TO-3PMLH • JEITA, JEDEC : SC-93, TO-247, SOT-199 • Minimum Packing Quantity : 100 pcs./tray Marking Electrical Connection TIG111 LOT No. 2 1 3 Tjmax - TC IC(TC)= Rth(j-c)×VCE(sat)max.(Tjmax, IC(TC)) 16.0 3.4 12 3 2.0 2.8 2.1 5.45 5.45 0.7 0.9 5.6 3.1 1 : Gate 2 : Collector 3 : Emitter SANYO : TO-3PMLH |
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