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MJ13333 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer MJ13333
Bauteilbeschribung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
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MJ13333 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ13333
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=100mA ; IB=0
400
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB=2A
IC= 10A; IB=2A,TC=100℃
1.8
2.4
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 20A; IB=6.7A
5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
IC= 10A; IB= 2A,TC=100℃
1.8
1.8
V
ICEV
Collector Cutoff Current
VCEV=400V;VBE(off)=1.5V
VCEV=400V;VBE(off)=1.5V;TC=150℃
0.25
5.0
mA
ICER
Collector Cutoff Current
VCE= 400V; RBE= 50Ω,TC= 100℃
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1
mA
hFE
DC Current Gain
IC= 5A ; VCE= 5V
10
60
fT
Current Gain-Bandwidth Product
IC= 0.3A ;VCE= 10V; ftest=1MHz
5
40
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1kHz
125
500
pF
Switching times;Resistive Load
td
Delay Time
0.02
0.1
μs
tr
Rise Time
0.3
0.7
μs
ts
Storage Time
1.6
4.0
μs
tf
Fall Time
IC= 10A , VCC= 250V; IB1=2A
VBE(off)= 5V; tp= 10μs;
Duty Cycle≤2.0%
0.3
0.7
μs
isc Website：www.iscsemi.cn
2


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