Datenblatt-Suchmaschine für elektronische Bauteile |
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MJ15002 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ15002 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15002 DESCRIPTION ・With TO-3 package ・Complement to type MJ15001 ・Excellent safe operating area APPLICATIONS ・For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -5 A IE Emitter current 20 A PD Total power dissipation TC=25℃ 250 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 0.875 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Ähnliche Teilenummer - MJ15002 |
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Ähnliche Beschreibung - MJ15002 |
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