SI1029X datasheet(2/10 Pages) VISHAY

Teilenummer	SI1029X

Bauteilbeschribung	Complementary N- and P-Channel 60 V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 71435

S10-2432-Rev. C, 25-Oct-10

Vishay Siliconix

Si1029X

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 10 µA

N-Ch

60

V

VGS = 0 V, ID = - 10 µA

P-Ch

- 60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

1

2.5

VDS = VGS, ID = - 250 µA

P-Ch

- 1

- 3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

N-Ch

± 50

nA

P-Ch

± 100

VDS = 0 V, VGS = ± 10 V

N-Ch

± 150

P-Ch

± 200

Zero Gate Voltage Drain Current

IDSS

VDS = 50 V, VGS = 0 V

N-Ch

10

VDS = - 50 V, VGS = 0 V

P-Ch

- 25

VDS = 50 V, VGS = 0 V, TJ = 85 °C

N-Ch

100

VDS = - 50 V, VGS = 0 V, TJ = 85 °C

P-Ch

- 250

On-State Drain Currenta

ID(on)

VDS = 10 V, VGS = 4.5 V

N-Ch

500

mA

VDS = - 10 V, VGS = - 4.5 V

P-Ch

- 50

VDS = 7.5 V, VGS = - 4.5 V

N-Ch

800

VDS = - 10 V, VGS = - 10 V

P-Ch

- 600

Drain-Source On-State

Resistancea

RDS(on)

VGS = 4.5 V, ID = 200 mA

N-Ch

3



VGS = - 4.5 V, ID = - 25 mA

P-Ch

8

VGS = 10 V, ID = 500 mA

N-Ch

1.40

VGS = - 10 V, ID = - 500 mA

P-Ch

4

VGS = 10 V, ID = 500 mA, TJ = 125 °C

N-Ch

2.50

VGS = - 10 V, ID = - 500 mA, TJ = 125 °C

P-Ch

6

Forward Transconductancea

gfs

VDS = 10 V, ID = 200 mA

N-Ch

200

ms

VDS = - 10 V, ID = - 100 mA

P-Ch

100

Diode Forward Voltagea

VSD

IS = 200 mA, VGS = 0 V

N-Ch

1.4

V

IS = - 200 mA, VGS = 0 V

P-Ch

- 1.4

Dynamicb

Total Gate Charge

Qg

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 250 mA

P-Channel

VDS = - 30 V, VGS = - 15 V, ID = - 500 mA

N-Ch

750

pC

P-Ch

1700

Gate-Source Charge

Qgs

N-Ch

75

P-Ch

260

Gate-Drain Charge

Qgd

N-Ch

225

P-Ch

460

Input Capacitance

Ciss

N-Channel

VDS = 25 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 25 V, VGS = 0 V, f = 1 MHz

N-Ch

30

pF

P-Ch

23

Output Capacitance

Coss

N-Ch

6

P-Ch

10

Reverse Transfer Capacitance

Crss

N-Ch

3

P-Ch

5

Turn-On Timec

tON

N-Channel

VDD = 30 V, RL = 150 

ID  200 mA, VGEN = 10 V, Rg = 10 

N-Ch

15

ns

P-Ch

20

Turn-Off Timec

tOFF

P-Channel

VDD = - 25 V, RL = 150 

ID  - 165 mA, VGEN = - 10 V, Rg = 10 

N-Ch

20

P-Ch

35

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