Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1035X Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI1035X Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 www.vishay.com 3 Vishay Siliconix Si1035X N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.1 0.2 0.3 0.4 0.5 01 23 45 6 VDS - Drain-to-Source Voltage (V) VGS = 5 V thru 1.8 V 1 V 0 10 20 30 40 0 50 100 150 200 250 ID - Drain Current (mA) VGS = 1.8 V VGS = 4.5 V VGS = 2.5 V 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 Qg - Total Gate Charge (nC) VDS = 10 V ID = 150 mA Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) TJ = - 55 °C 125 °C 25 °C 0 20 40 60 80 100 04 8 12 16 20 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VGS = 0 V f = 1 MHz 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 VGS = 4.5 V ID = 200 mA TJ -Junction Temperature (°C) VGS = 1.8 V ID = 175 mA |
Ähnliche Teilenummer - SI1035X_10 |
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Ähnliche Beschreibung - SI1035X_10 |
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