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SI1035X Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI1035X Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 Vishay Siliconix Si1035X N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage Variance vs. Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 1 VSD -) V ( e g a t l o V n i a r D - o t - e c r u o S TJ = 125 °C TJ = 25 °C TJ = 50 °C 10 100 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 ID = 0.25 mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage IGSS vs. Temperature 0 10 20 30 40 50 0123456 D = 175 mA VGS - Gate-to-Source Voltage (V) ID = 200 mA I 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) VGS = 2.8 V BVGSS vs. Temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 TJ -Temperature (°C) |
Ähnliche Teilenummer - SI1035X_10 |
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Ähnliche Beschreibung - SI1035X_10 |
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