Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1551DL Datenblatt(PDF) 6 Page - Vishay Siliconix |
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SI1551DL Datenblatt(HTML) 6 Page - Vishay Siliconix |
6 / 12 page www.vishay.com 6 Document Number: 71255 S10-0935-Rev. D, 19-Apr-10 Vishay Siliconix Si1551DL P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VDS = 10 V ID = 0.41 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 1 0.1 VSD -) V ( e g a t l o V n i a r D - o t - e c r u o S - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 0.41 A TJ - Junction Temperature (°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01 2 3 45 ID = 0.41 A VGS - Gate-to-Source Voltage (V) 0 3 5 1 2 Time (s) 4 1 100 600 10 10-1 10-2 10-3 |
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