Datenblatt-Suchmaschine für elektronische Bauteile |
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ST110S08P2VLPBF Datenblatt(PDF) 2 Page - Vishay Siliconix |
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ST110S08P2VLPBF Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94393 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-Aug-10 ST110SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 110 A 90 °C Maximum RMS on-state current IT(RMS) DC at 85 °C case temperature 175 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 2700 t = 8.3 ms 2830 t = 10 ms 100 % VRRM reapplied 2270 t = 8.3 ms 2380 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 36.4 kA2s t = 8.3 ms 33.2 t = 10 ms 100 % VRRM reapplied 25.8 t = 8.3 ms 23.5 Maximum I2 t for fusing I2 t t = 0.1 to 10 ms, no voltage reapplied 364 kA2 s Low level value of threshold voltage VT(TO)1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.90 V High level value of threshold voltage VT(TO)2 (I > x I T(AV)), TJ = TJ maximum 0.92 Low level value of on-state slope resistance rt1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 1.79 m High level value of on-state slope resistance rt2 (I > x I T(AV)), TJ = TJ maximum 1.81 Maximum on-state voltage VTM Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current IL 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 , t r 1 μs TJ = TJ maximum, anode voltage 80 % VDRM 500 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 2.0 μs Typical turn-off time tq ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 20 mA |
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