TSAL5100 datasheet(2/5 Pages) VISHAY

Teilenummer	TSAL5100

Bauteilbeschribung	High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 81007

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Rev. 1.6, 29-Jun-09

2

TSAL5100

High Power Infrared Emitting Diode,

940 nm, GaAlAs/GaAs

Vishay Semiconductors

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

Note

Tamb = 25 °C, unless otherwise specified

0

20

40

60

80

100

120

140

160

180

010

20

30

40

50

60

70

80

90

100

21211

T

amb - Ambient Temperature (°C)

R

thJA = 230 K/W

0

20

40

60

80

100

120

0

10

203040

506070

80

90 100

T

amb - Ambient Temperature (°C)

21212

R

thJA = 230 K/W

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.35

1.6

V

IF = 1 A, tp = 100 µs

VF

2.6

3

V

Temperature coefficient of VF

IF = 1 mA

TKVF

- 1.8

mV/K

Reverse current

VR = 5 V

IR

10

µA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

25

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

80

130

400

mW/sr

IF = 1 A, tp = 100 µs

Ie

650

1000

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φ

e

35

mW

Temperature coefficient of

φ

e

IF = 20 mA

TK

φ

e

- 0.6

%/K

Angle of half intensity

ϕ

± 10

deg

Peak wavelength

IF = 100 mA

λ

p

940

nm

Spectral bandwidth

IF = 100 mA

Δλ

50

nm

Temperature coefficient of

λ

p

IF = 100 mA

TK

λ

p

0.2

nm/K

Rise time

IF = 100 mA

tr

800

ns

Fall time

IF = 100 mA

tf

800

ns

Virtual source diameter

method: 63 % encircled energy

d

3.7

mm

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