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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BCX70G Datenblatt(PDF) 1 Page - Central Semiconductor Corp |
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BCX70G Datenblatt(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  BCX70 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX70 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODES: BCX70G: AG BCX70H: AH BCX70J: AJ BCX70K: AK MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=45V 20 nA ICBO VCB=45V, TA=150°C 20 μA IEBO VEB=4.0V 20 nA BVCBO IC=10μA 45 V BVCEO IC=10mA 45 V BVEBO IE=1.0μA 5.0 V VCE(SAT) IC=10mA, IB=250μA 0.05 0.35 V VCE(SAT) IC=50mA, IB=1.25mA 0.10 0.55 V VBE(SAT) IC=10mA, IB=250μA 0.60 0.85 V VBE(SAT) IC=50mA, IB=1.25mA 0.70 1.05 V VBE(ON) VCE=5.0V, IC=2.0mA 0.55 0.75 V fT VCE=5.0V, IC=10mA, f=100MHz 100 250 MHz Cc VCB=10V, IE=0, f=1.0MHz 1.7 pF Ce VEB=0.5V, IC=0, f=1.0MHz 11 pF NF VCE=5.0V, IC=200μA, RS=2.0kΩ, f=1.0kHz, BW=200Hz 6.0 dB BCX70G BCX70H BCX70J BCX70K MIN MAX MIN MAX MIN MAX MIN MAX hFE VCE=5.0V, IC=10μA 40 30 100 hFE VCE=5.0V, IC=2.0mA 120 220 180 310 250 460 380 630 hFE VCE=1.0V, IC=50mA 50 70 90 100 SOT-23 CASE R2 (20-November 2009) www.centra lsemi.com |
Ähnliche Teilenummer - BCX70G |
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Ähnliche Beschreibung - BCX70G |
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