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BUZ101S Datenblatt(PDF) 8 Page - Siemens Semiconductor Group

Teilenummer BUZ101S
Bauteilbeschribung  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
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Hersteller  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ101S Datenblatt(HTML) 8 Page - Siemens Semiconductor Group

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Semiconductor Group
8
04/Nov/1997
Preliminary data
BUZ 101 S
SPP22N05
Avalanche energy
EAS = f (Tj)
parameter:
ID=22A,VDD =25 V
RGS =25 Ω , L = 372µH
20
40
60
80
100
120
140
°C
180
T
j
0
10
20
30
40
50
60
70
80
mJ
100
E
AS
Typ. gate charge
VGS = ƒ(QGate)
parameter:
ID puls = 22 A
0
4
8
12
16
nC
24
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
-60
-20
20
60
100
°C
180
T
j
49
51
53
55
57
59
61
V
65
V
(BR)DSS


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