Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ103S Datenblatt(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ103S Datenblatt(HTML) 1 Page - Siemens Semiconductor Group |
1 / 8 page Semiconductor Group 1 30/Jan/1998 BUZ 103 S SPP31N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 103 S 55 V 31 A 0.04 Ω TO-220 AB Q67040-S4009-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID 22 31 A Pulsed drain current TC = 25 °C IDpuls 124 Avalanche energy, single pulse ID = 31 A, VDD = 25 V, RGS = 25 Ω L = 291 µH, Tj = 25 °C EAS 140 mJ Avalanche current,limited by Tjmax IAR 31 A Avalanche energy,periodic limited by Tjmax EAR 7.5 mJ Reverse diode dv/dt IS = 31 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 75 W |
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