Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ103SL-4 Datenblatt(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ103SL-4 Datenblatt(HTML) 1 Page - Siemens Semiconductor Group |
1 / 8 page Semiconductor Group 1 05/Sep/1997 BUZ 103SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 103SL-4 55 V 4.8 A 0.055 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active TA = 25 °C ID 4.8 A Pulsed drain current one channel active TA = 25 °C IDpuls 19.2 Avalanche energy, single pulse ID = 4.8 A, VDD = 25 V, RGS = 25 Ω L = 12 mH, Tj = 25 °C EAS 140 mJ Reverse diode d v/dt IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C d v/dt 6 kV/µs Gate source voltage VGS ± 14 V Power dissipation ,one channel active TA = 25 °C Ptot 2.4 W Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 IEC climatic category, DIN IEC 68-1 55 / 175 / 56 |
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Ähnliche Beschreibung - BUZ103SL-4 |
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