BUZ111 datasheet(3/8 Pages) SIEMENS

Teilenummer	BUZ111

Bauteilbeschribung	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

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Hersteller	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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3 / 8 page

Semiconductor Group

3

28/Jan/1998

BUZ111S

SPP80N05

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 80 A

gfs

30

-

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

-

3600

4500

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

-

1100

1375

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

-

550

690

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 80 A

RG = 2.4 Ω

td(on)

-

25

37

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 80 A

RG = 2.4 Ω

tr

-

30

45

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 80 A

RG = 2.4 Ω

td(off)

-

65

95

Fall time

VDD = 30 V, VGS = 10 V, ID = 80 A

RG = 2.4 Ω

tf

-

40

60

Gate charge at threshold

VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V

Qg(th)

-

3.3

5

nC

Gate charge at 7.0 V

VDD = 40 V, ID = 80 A, VGS =0 to 7 V

Qg(7)

-

95

140

Gate charge total

VDD = 40 V, ID = 80 A, VGS =0 to 10 V

Qg(total)

-

125

185

Gate plateau voltage

VDD = 40 V, ID = 80 A

V(plateau)

-

5.45

-

V

Ähnliche Beschreibung - BUZ111

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More results

BUZ111 Datenblatt(PDF) 3 Page - Siemens Semiconductor Group

BUZ111 Datenblatt(HTML) 3 Page - Siemens Semiconductor Group

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