Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ172 Datenblatt(PDF) 5 Page - Siemens Semiconductor Group |
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BUZ172 Datenblatt(HTML) 5 Page - Siemens Semiconductor Group |
5 / 9 page 5 07/96 Semiconductor Group BUZ 172 Power dissipation Ptot = ƒ(TC) 0 20 40 60 80 100 120 °C 160 T C 0 5 10 15 20 25 30 35 W 45 P tot Drain current ID = ƒ(TC) parameter: V GS ≥ -10 V 0 20 40 60 80 100 120 °C 160 T C 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 A -6.0 I D Safe operating area I D = ƒ(VDS) parameter: D = 0.01, T C = 25°C -1 -10 0 -10 1 -10 2 -10 A I D -10 0 -10 1 -10 2 V V DS R V I DC 10 ms 1 ms 100 µs t p = 25.0µs Transient thermal impedance Z th JC = ƒ(tp) parameter: D = t p / T -3 10 -2 10 -1 10 0 10 1 10 K/W Z thJC 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
Ähnliche Teilenummer - BUZ172 |
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Ähnliche Beschreibung - BUZ172 |
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