BUZ205 datasheet(6/6 Pages) SIEMENS

Teilenummer	BUZ205

Bauteilbeschribung	SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

Download	6 Pages

Scroll/Zoom	100%

Hersteller	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

Logo

6 / 6 page

Semiconductor Group

513

BUZ 205

Typ. capacitances

C = f (V

DS)

parameter:

V

GS = 0 V, f = 1 MHz

Forward characteristics of reverse diode

I

F = f (VSD)

parameter:

t

p = 80 µs, Tj

Drain current

I

D = f (TC)

parameter:

V

GS ≥ 10 V

Transient thermal impedance

Z

th JC = f (tp)

parameter:

D = t

p / T

Ähnliche Beschreibung - BUZ205

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Siemens Semiconductor G...	BUZ385	155Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
	BUZ215	120Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
	BUZ380	152Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
	BUZ384	157Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
	BUZ50B	199Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode)
	BUZ80A	176Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode)
	BUZ310	240Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode)
	BUZ50C	203Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode)
	BUZ50A	207Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode)
	BUZ311	240Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode)