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BUZ305 Datenblatt(PDF) 4 Page - Siemens Semiconductor Group |
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BUZ305 Datenblatt(HTML) 4 Page - Siemens Semiconductor Group |
4 / 8 page Semiconductor Group 4 01/97 BUZ 305 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 7.5 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 30 Inverse diode forward voltage VGS = 0 V, IF = 15 A VSD - 0.95 1.4 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 750 - ns Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Qrr - 15 - µC |
Ähnliche Teilenummer - BUZ305 |
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Ähnliche Beschreibung - BUZ305 |
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