Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ31 Datenblatt(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ31 Datenblatt(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 07/96 BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 31 200 V 14.5 A 0.2 Ω TO-220 AB C67078-S.1304-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 30 °C ID 14.5 A Pulsed drain current TC = 25 °C IDpuls 58 Avalanche current,limited by Tjmax IAR 14.5 Avalanche energy,periodic limited by Tjmax EAR 9 mJ Avalanche energy, single pulse ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 mH, Tj = 25 °C EAS 200 Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 95 W Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.32 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
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