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BUZ326 Datenblatt(PDF) 2 Page - Siemens Semiconductor Group |
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BUZ326 Datenblatt(HTML) 2 Page - Siemens Semiconductor Group |
2 / 9 page Semiconductor Group 2 07/96 BUZ 326 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 400 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C IDSS - - 10 0.1 100 1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 10 V, ID = 6.5 A RDS(on) - 0.35 0.5 Ω |
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